• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    The present invention relates to a liquid crystal display device having a short circuit for inspecting a thin film transistor, wherein the first and second source short circuits are alternately connected to at least two source pads, and the two pixel electrodes are recognized as one to be scanned. As a result, it is possible to inspect the active panel of the high resolution product in which the separation distance and the area of the pixel electrode become minute.
    公开号:KR20030057043A
    申请号:KR1020010087415
    申请日:2001-12-28
    公开日:2003-07-04
    发明作者:최승규；김현태
    申请人:엘지.필립스 엘시디 주식회사；
    IPC主号:
    专利说明:

    Liquid crystal display device with short wiring for thin film transistor inspection {{LIQUID CRYSTAL DISPLAY HAVING SHORTING BAR FOR TESTING THIN FILM TRANSISTOR}
    [14] The present invention is referred to as an active matrix liquid crystal display (LCD) including an active panel in which thin film transistors (TFTs) and pixel electrodes connected to the thin film transistors are arranged in a matrix manner. And a method for producing the same. In particular, the present invention relates to a liquid crystal display device having a short-circuit wiring for inspecting a thin film transistor that is suitable for a high resolution product in inspecting a completed active panel.
    [15] Among the screen display devices that display image information on the screen, the thin-film flat panel display device has become an object of intensive development in recent years because of its advantages of being light and easily used in any place. In particular, liquid crystal displays have high resolution and are fast in reaction speeds sufficient to realize moving images, and thus are the most active studies.
    [16] The principle of the liquid crystal display device is to use the optical anisotropy and polarization properties of the liquid crystal. That is, by artificially adjusting the alignment direction of the liquid crystal molecules having directionality using polarization, light transmission and blocking are possible with optical anisotropy according to the alignment direction. Apply this to use as a screen display device. Currently, an active matrix liquid crystal display in which thin film transistors and pixel electrodes connected thereto are arranged in a matrix manner is most commonly used because it provides excellent image quality. Looking at the structure of a general liquid crystal display device in detail as follows.
    [17] One panel (or color filter panel) of the liquid crystal display has a structure in which red, blue, and green color filters are sequentially arranged at pixel positions on a transparent substrate. A black matrix is formed in a mesh shape between the color filters. A common electrode is formed on the color filter.
    [18] The other panel (or active panel) of the liquid crystal display has a structure in which pixel electrodes are arranged at positions of pixels designed in a matrix manner on a transparent substrate. Signal wirings are formed along the horizontal direction of the pixel electrode, and data wirings are formed along the vertical direction. In one corner of the pixel electrode, a thin film transistor for driving the pixel electrode is formed. The gate electrode of the thin film transistor is connected to the signal wiring (hence the gate wiring), and the source electrode of the thin film transistor is connected to the data wiring (hence the source wiring).
    [19] At the end of each wiring, a pad portion for connecting with an external drive circuit is formed.
    [20] The two panels as described above are attached opposite each other at a certain interval (this gap is called a cell gap), and the liquid crystal material is filled therebetween.
    [21] In manufacturing an active panel used in the liquid crystal display, a method of simultaneously forming short circuits for inspecting driving states of devices after completing a substrate will be described in detail with reference to the accompanying drawings. Same as That is, an exemplary view of FIG. 1 showing a planar structure of a portion of an active substrate, and an exemplary view of FIGS. 2A to 2E showing a sequential cross-sectional structure of active substrate fabrication cut along the line II-II of FIG. 3A through 3E show a sequential cross-sectional structure of active substrate fabrication cut along line III-III of FIG. 1, and a sequential cross-sectional structure of active substrate fabrication cut along line IV-IV of FIG. It will be described with reference to the exemplary view of Figures 4a to 4e shown.
    [22] 1, 2A, 3A, and 4A, an aluminum or aluminum alloy is deposited and patterned on a transparent substrate 1 to form a gate electrode 11, a gate wiring 13, a gate pad 15, a source. The pad 25 and the short circuit wiring 45 are formed. The gate wirings 13 are regularly spaced apart and arranged in rows, and extend from a predetermined position of the gate wirings 13 to form the gate electrodes 11. The gate pad 15 is formed at the end of the gate line 13, and the source pad 25 is formed at the end of the source line 23 to be formed later. The short circuit line 45 is formed at an outer circumference of the substrate 1 while connecting the gate pad 15 and the source pad 25.
    [23] In general, hillocks are likely to grow on the surface of the metal layer including aluminum, which may cause a failure later when other materials are laminated.
    [24] In order to prevent the hillock, the metal layer is anodized to form an anodized film 19 on the surface. In this case, since the gate electrode 11, the gate wiring 13, the gate pad 15, and the source pad 25 are connected to each other through a short circuit wiring 45, they are suitable for anodic oxidation.
    [25] However, since the anodized surface does not carry current well, it is preferable that the gate pad 15 and the source pad 25 to be connected to the external terminals do not anodize. Therefore, a film for preventing anodization is formed on the gate pad 15 and the source pad 25 by using a photoresist, and the anodic oxidation process is performed.
    [26] As a result, the gate electrode 11 including the anodic oxide film 19 is formed on the surface of the substrate 1 as shown in FIG. 2A. In the portion where the gate pad 15 and the short circuit wiring 45 are formed, the short circuit wiring 45 and the gate wiring 13 including the anodic oxide film 19 are formed on the surface of the substrate 1 as shown in FIG. 3A. The gate pad 15 which does not contain the anodic oxide film 19 is formed on the surface of the substrate 1. In the portion where the source pad 25 and the short circuit wiring 45 are formed, the short circuit wiring 45 including the anodic oxide film 19 is formed on the surface of the substrate 1 as shown in FIG. 4A, and the substrate 1 is formed. The source pad 25 which does not contain the anodization film 19 is formed on the surface thereof.
    [27] Referring to FIGS. 2B, 3B, and 4B, oxidation is performed on the entire surface of the substrate 1 on which the gate electrode 11, the gate wiring 13, the gate pad 15, the source pad 25, and the short circuit wiring 45 are formed. Silicon, silicon nitride, or the like is deposited to form a gate insulating film 17.
    [28] In addition, an intrinsic semiconductor material and a semiconductor material to which impurities are added are sequentially formed on the gate insulating film 17, and patterned by photolithography to form the semiconductor layer 35 and the impurity semiconductor layer 37 in the thin film transistor portion as shown in FIG. 2B. To form.
    [29] 3B and 4B, the gate insulating layer 17 covering the gate pad 15 and the source pad 25 is etched to etch the first gate contact holes 51 and the first source contact hole. 61) form. The first gate contact holes 51 expose portions of the gate pad 15 that are not anodized. The first source contact holes 61 expose portions of the source pad 25 that are not anodized.
    [30] Referring to FIGS. 2C, 3C, and 4C, a metal such as chromium is deposited on the entire surface of the substrate 1 on which the semiconductor layer 35 and the impurity semiconductor layer 37 are formed, and then patterned to form the source electrode 21 and the drain. The electrode 31, the source wiring 23, the gate pad intermediate electrode 55, and the source pad intermediate electrode 65 are formed.
    [31] Therefore, the portion where the thin film transistor is formed is patterned such that the source electrode 21 and the drain electrode 31 face each other with respect to the gate electrode 11 as shown in FIG. 2C. The impurity semiconductor layer 37 exposed through the source electrode 21 and the drain electrode 31 is etched to electrically insulate the source electrode 21 and the drain electrode 31.
    [32] The gate pad 15 may be formed on the gate pad 15 through the first gate contact holes 51 in which the gate pad intermediate electrode 55 is formed in the gate insulating layer 17, as shown in FIG. 3C. Connected.
    [33] In addition, the portion where the source pad 25 is formed may be formed with the source pad 25 through the first source contact holes 61 in which the source pad intermediate electrode 65 is formed in the gate insulating layer 17, as shown in FIG. 4C. Connected.
    [34] 2D, 3D, and 4D, a substrate on which the source electrode 21, the source wiring 23, the drain electrode 31, the gate pad intermediate electrode 55, and the source pad intermediate electrode 65 are formed ( 1) The protective film 41 is formed on it, and then patterned by photolithography.
    [35] Accordingly, in the portion where the thin film transistor is formed, a portion of the protective layer 41 is etched by photolithography as shown in FIG. 2D to form a drain contact hole 71 exposing a portion of the drain electrode 31.
    [36] In addition, as shown in FIG. 3D, a portion of the passivation layer 41 is etched by photolithography to expose a portion of the gate pad intermediate electrode 55. 53) is formed.
    [37] In addition, as shown in FIG. 4D, portions of the source pad 25 are formed with second source contact holes exposing a portion of the source pad intermediate electrode 65 by etching a portion of the passivation layer 41 by photolithography. 63) is formed.
    [38] Although the inorganic insulating film mainly made of silicon nitride or silicon oxide is applied to the passivation layer 41, recently, an organic insulating film such as benzocyclobutene (BCB), spin on glass (SOG) or acryl is applied to improve the aperture ratio of the liquid crystal cell. Efforts are being made.
    [39] On the other hand, when forming the conductive films, in order to prevent the generation of static electricity, the intersection region (A in FIG. 1) of the short circuit line 45 connecting the gate pad 15 and the source pad 25 needs to be further connected. Since there is no, it is selectively removed by etching by photolithography. As a result, the short wiring 45 traveling in the row direction connects the source pads 25 (hence, also referred to as source short wiring). On the other hand, the short-circuit wiring 45 traveling in the column direction connects the gate pads 15 (hence the gate short-circuit wiring).
    [40] 2E, 3E, and 4E, a transparent conductive material such as indium tin oxide (ITO) is deposited on the entire surface of the passivation layer 41, and then patterned by photolithography.
    [41] Therefore, the pixel electrode 33 is connected to the drain electrode 31 through the drain contact hole 71 as shown in FIG. 2E.
    [42] The gate pad connection terminal 57 is connected to the gate pad intermediate electrode 55 through the second gate contact holes 53 as shown in FIG. 3E.
    [43] In addition, the source pad connection terminal 67 is connected to the source pad intermediate electrode 65 through the second source contact holes 63 as shown in FIG. 4E.
    [44] In the conventional active substrate as described above, when the gate wiring is patterned to facilitate anodization, the thin film transistor inspection short circuit is electrically connected to all the gate pads and the source pads.
    [45] Subsequently, the intersecting regions of the short circuits were selectively removed so that the short circuits were connected to the gate pads and the source pads, respectively, and separated into gate short circuits connecting the gate pads and source short circuits connecting the source pads.
    [46] The inspection process of the active panel having the short-circuit wiring for the thin film transistor inspection as described above is as follows.
    [47] First, when a gate turn-on voltage is applied to the gate short-circuit line, the gate turn-on voltage is applied to the gate of the thin film transistor through all the gate pads and the gate lines of the active panel to turn on the thin film transistor. When the test voltage is applied to the source short circuit, the test voltage is applied to the source electrode of the thin film transistor through all the source pads and the source wirings of the active panel.
    [48] Since the thin film transistor is turned on, the test voltage applied to the source electrode of the thin film transistor is applied to the drain electrode via the conductive channel.
    [49] Since the drain electrode is connected to the pixel electrode, the test voltage is applied to all the pixel electrodes of the active panel as a result.
    [50] Therefore, when the voltage is applied to the pixel electrode, the disconnection defect of the gate lines or the source lines can be inspected.
    [51] However, the prior art has the following disadvantages.
    [52] First, when a short circuit occurs between neighboring gate lines or neighboring source lines, a normal disconnection failure cannot be detected.
    [53] Secondly, as the mask process to remove the cross section of the anodization process and the short-circuit wiring is additionally required, the time required for product production is increased, the product production cost is increased, and the occurrence of defects due to mask misalignment is increased. Is lowered.
    [54] Therefore, in view of the above-mentioned disadvantages, even if a short circuit occurs between neighboring gate lines or neighboring source lines while reducing the number of mask processes, disconnection of the gate lines and the source lines is poor and driving failure of the thin film transistor. A liquid crystal display device having a short-circuit wiring for inspecting a thin film transistor and a method of manufacturing the same have been proposed by the present applicant (Korean Patent Registration Nos. 10-0244449 and 10-0271038).
    [55] Looking briefly at the contents disclosed in the Republic of Korea Patent Registration Nos. 10-0244449 and 10-0271038, when forming the gate wiring, the aluminum is not anodized in order to prevent hillocks occurring on the aluminum surface, By protecting it with a metal with good surface stability such as chromium, the number of mask processes used in the anodization step and the pad part contact hole forming step is reduced, and the short circuit wiring which detects defects in the gate wiring and the source wiring is even with the odd wiring. By separating and forming the second wiring, not only the disconnection failure of each wiring can be inspected, but also the short circuit failure of two adjacent wirings can be inspected.
    [56] That is, referring to the simplified exemplary view of FIG. 5, the gate lines 113 are uniformly spaced and arranged in rows on the substrate 101, and the source lines 123 are regularly spaced and arranged in columns. Thus, the gate lines 113 and the source lines 123 vertically cross each other. In this case, the unit liquid crystal cell is defined at each intersection of the gate lines 113 and the source lines 123, and the unit liquid crystal cell includes a thin film transistor TFT and a drain electrode of the thin film transistor TFT (shown in the drawing). Pixel electrode 133 connected thereto).
    [57] Gate pads 115 are formed at one end of the gate wires 113 to be connected to the gate wires 113, respectively, and to form first and second gate short circuits connected to the gate pads 115. 145, 146 are formed. In this case, the first gate short circuit 145 is connected to the odd-numbered gate pads 115, and the second gate short circuit line 146 is connected to the even-numbered gate pads 115.
    [58] Meanwhile, source pads 125 are formed at one end of the source wires 123 to be connected to the source wires 123, respectively, and the first and second source short circuits connected to the source pads 125. Wirings 155 and 156 are formed. In this case, the first source short circuit 155 is connected to the odd-numbered source pads 125 and the second source short circuit line 156 is connected to the even-numbered source pads 125.
    [59] The inspection process of the active panel having the short-circuit wiring for the thin film transistor inspection as described above is as follows.
    [60] First, when a gate turn-on voltage is applied to the first gate short circuit 145 or the second gate short circuit 146, the odd-numbered or even-numbered gate pads 115 and the gate lines 113 of the active panel are applied. The gate turn-on voltage is applied to the gate of the thin film transistor TFT to turn on the thin film transistor TFT. When a test voltage is applied to the first and second source short circuits 155 and 156, the thin film transistor TFT may be formed through the odd-numbered and even-numbered source pads 125 and the source lines 123 of the active panel. A test voltage is applied to the source electrode.
    [61] The test voltage applied to the source electrode of the thin film transistor TFT is applied to the drain electrode via the conductive channel of the turned-on thin film transistor TFT. Since the drain electrode is connected to the pixel electrode 133, a test voltage is applied to the pixel electrode 133 connected to the drain electrode of the turned-on thin film transistor TFT of the active panel.
    [62] Here, the test voltages applied to the first and second source short circuits 155 and 156 are applied differently. For example, a test voltage of 10 V is applied to the first source short circuit 155 and a test voltage of 5 V is applied to the second source short circuit 156.
    [63] Since the odd-numbered source pads 125 are connected to the first source short circuit line 155 and the even-numbered source pads 125 are connected to the second source short circuit line 156, the odd-numbered source pads ( 125 and the pixel electrodes 133 to which a test voltage of 10 V is applied through the source wires 123 connected thereto are compared with each other to check for disconnection defects, and to even-numbered times connected to the second source short-circuit wiring 156. The disconnection defect is inspected by comparing the pixel electrodes 133 to which a test voltage of 5V is applied through the source pads 125 and the source wires 123 connected thereto.
    [64] Therefore, even when short-circuit failure of the source wirings 123 neighboring each other occurs, disconnection failure of each source wiring 123 can be effectively inspected, and short-circuit failure of the source wirings 123 adjacent to each other can also be inspected. Can be.
    [65] As described above, the first and second gate short circuits are connected to odd-numbered gate pads and even-numbered gate pads, respectively, and the first and second source short-circuit wirings are odd-numbered source pads and even-numbered source pads, respectively. Conventional liquid crystal display devices having a short-circuit wiring for thin film transistor inspection connected to are capable of inspecting the active panel very effectively in low-resolution products having a relatively large margin in the distance and area of the pixel electrode, but the distance and area of the pixel electrode In the high resolution products that become finer than low resolution products, there is a problem that the inspection of the active panel is impossible.
    [66] Accordingly, an object of the present invention is to provide a liquid crystal display device having a short circuit for inspecting a thin film transistor capable of inspecting an active panel of a high resolution product.
    [1] 1 is an exemplary view showing a planar structure of a portion of an active substrate having a short circuit for general thin film transistor inspection.
    [2] Figures 2a to 2e is an exemplary view showing a sequential cross-sectional structure of the active substrate cut along the line II-II of Figure 1;
    [3] Figures 3a to 3e is an exemplary view showing a sequential cross-sectional structure of the active substrate cut along the line III-III of Figure 1;
    [4] Figures 4a to 4e is an exemplary view showing a sequential cross-sectional structure of the active substrate cut along the line IV-IV of Figure 1;
    [5] FIG. 5 is an exemplary view schematically showing a liquid crystal display having a conventional thin film transistor inspection short circuit formed by separating short circuits connected to odd-numbered and even-numbered gate lines and source lines. FIG.
    [6] Fig. 6 is an exemplary view showing one embodiment of a liquid crystal display device having a short circuit for inspecting a thin film transistor according to the present invention.
    [7] 7 is an exemplary view showing another embodiment of a liquid crystal display device having a short circuit for inspecting a thin film transistor according to the present invention.
    [8] 8 is an exemplary view showing another embodiment of a liquid crystal display device having a short circuit for inspecting a thin film transistor according to the present invention.
    [9] *** Explanation of symbols for main parts of drawing ***
    [10] 201: substrate 213: gate wirings
    [11] 215: gate pads 223: source wirings
    [12] 233: pixel electrode 225: source pads
    [13] 245, 246: first and second gate short circuit wiring 255, 256: first and second source short circuit wiring
    [67] A liquid crystal display device having a short circuit for inspecting a thin film transistor for achieving the object of the present invention as described above comprises: gate wirings and source wirings arranged vertically on a substrate; Gate pads connected to gate lines at one end of the gate lines and source pads connected to source pads at one end of the source lines; And first and second source short-circuit wirings alternately connected to the source pads at least two by one.
    [68] An exemplary view of FIG. 6 with a liquid crystal display device having a short-circuit wiring for inspecting a thin film transistor according to the present invention as described above will be described in detail as an embodiment.
    [69] Referring to FIG. 6, the gate lines 213 are uniformly spaced and arranged in rows on the substrate 201, and the source lines 223 are uniformly spaced and arranged in columns. Thus, the gate lines 213 and the source lines 223 vertically cross each other. In this case, the unit liquid crystal cell is defined at each intersection of the gate lines 213 and the source lines 223, and the unit liquid crystal cell includes a thin film transistor TFT and a drain electrode of the thin film transistor TFT (shown in the drawing). And a pixel electrode 233 connected thereto. Further, a source electrode (not shown in the figure) of the thin film transistor TFT is connected to the source wirings 223, and a gate electrode (not shown in the figure) is connected to the gate wirings 213. .
    [70] Gate pads 215 may be formed at one end of the gate lines 213 to be connected to the gate lines 213, respectively, and may include first and second gate short circuits connected to the gate pads 215. 245,246 are formed. In this case, the first gate short circuit 245 is connected to the odd-numbered gate pads 215, and the second gate short circuit line 246 is connected to the even-numbered gate pads 215.
    [71] Meanwhile, source pads 225 are formed at one end of the source wires 223 to be connected to the source wires 223, respectively, and the first and second source short circuits connected to the source pads 225. Wirings 255 and 256 are formed. In this case, the first and second source short circuits 255 and 256 are alternately connected to each of the source pads 225.
    [72] For example, the first source short circuit 255 is connected to the source pads 225 arranged in the order of the first and second, the fifth and sixth, the ninth and the tenth, and the second source short circuit ( 256 is connected to the source pads 225 arranged in the order of the third and fourth, seventh and eighth, eleventh and twelfth.
    [73] The inspection process of the active panel having the short-circuit wiring for the thin film transistor inspection as described above is as follows.
    [74] First, when a gate turn-on voltage is applied to the first gate short circuit 245 or the second gate short circuit 246, the odd-numbered or even-numbered gate pads 215 and the gate lines 213 of the active panel are applied. The gate turn-on voltage is applied to the gate of the thin film transistor TFT to turn on the thin film transistor TFT. When a test voltage is applied to the first and second source short circuits 255 and 256, the source pads 225 and the source wirings connected to the first and second source short circuits 255 and 256 by alternating two active panels, respectively. The test voltage is applied to the source electrode of the thin film transistor TFT through 223.
    [75] The test voltage applied to the source electrode of the thin film transistor TFT is applied to the drain electrode via the conductive channel of the turned-on thin film transistor TFT. Since the drain electrode is connected to the pixel electrode 233, the test voltage is applied to the pixel electrode 233 connected to the drain electrode of the turned-on thin film transistor TFT of the active panel.
    [76] Here, test voltages applied to the first and second source short circuits 255 and 256 are differently applied. For example, a test voltage of 10 V is applied to the first source short circuit 255, and a test voltage of 5 V is applied to the second source short circuit wiring 256.
    [77] Source pads 225 arranged in the order of first and second, fifth and sixth, ninth and tenth are connected to the first source short circuit 255, and the second source short circuit 256 is connected to the first source short circuit 255. Since the source pads 225 arranged in the third and fourth, seventh and eighth, eleventh and twelfth order are connected, the first and second, fifth and sixth, ninth and tenth order are connected. By comparing the two adjacent pixel electrodes 233 to which a test voltage of 10V is applied through the source pads 225 and the source wirings 223 connected thereto, a disconnection defect is inspected, and a third And two adjacent pixels to which a test voltage of 5V is applied through the source pads 225 arranged in the order of the fourth, seventh and eighth, eleventh and twelfth, and the source wirings 223 connected thereto. Compare the electrodes 233 with each other Inspect the line is bad.
    [78] For example, two pixel electrodes to which a test voltage of 10 V is applied through first and second source pads 225 connected to the first source short circuit 255 and source wires 223 connected thereto. Two pixel electrodes 233 to which a test voltage of 10V is applied through the fifth and sixth source pads 225 and the source wires 223 connected thereto are scanned as one other. After recognition and scanning, they are compared with each other to check for disconnection defects.
    [79] Similarly, two pixel electrodes 233 to which a test voltage of 5 V is applied through the third and fourth source pads 225 connected to the second source short wiring 256 and the source wirings 223 connected thereto. ) Is recognized as one and scanned, and the two pixel electrodes 233 to which a test voltage of 5V is applied are recognized through the seventh and eighth source pads 225 and the source wires 223 connected thereto. Scan and compare them to each other to check for open circuit failures.
    [80] Accordingly, the liquid crystal display device having the short-circuit wiring for inspecting the thin film transistor according to the present invention can be effectively applied to the case of inspecting an active panel of a high resolution product in which the separation distance and area of the pixel electrode become minute.
    [81] That is, in the related art, it is not possible to apply to a high-resolution product in which the separation distance and area of the pixel electrode become fine due to the method of scanning and comparing the individual pixel electrodes. However, in the present invention, the two pixel electrodes are recognized as one and scanned and compared. It can be applied to high resolution products in which the spacing and area of the electrode become minute.
    [82] Like the first and second source short circuits, the first and second gate short circuits may be configured to be alternately connected to the gate pads two by one, which is illustrated in the example of FIG. 7.
    [83] In general, in the case of a high resolution product, an area occupied by two pixel electrodes is similar to an area occupied by one pixel electrode of a low resolution product. Thus, in an exemplary embodiment of the present invention, the first and second source short-circuit wirings may correspond to the source pads. Although the configuration is limited to two alternately connected configurations, the first and second source short circuits may be alternately connected to the source pads three by three according to the separation distance and area of the pixel electrode according to the resolution of the product. This is illustrated in the exemplary diagram of FIG. 8.
    [84] Furthermore, although not shown in the drawings of the present invention, the first and second source short circuits may be configured to be alternately connected to three or more source pads, and similarly, the first and second gate short circuits may be gate pads. It can also be configured to be connected alternately with three or more.
    [85] As described above, the liquid crystal display device having the short circuit for inspecting the thin film transistor according to the present invention is configured such that the first and second source short circuits are alternately connected to at least two of the source pads, and the two pixel electrodes are recognized as one. By scanning, the active panel of the high resolution product, in which the separation distance and area of the pixel electrode becomes minute, can be inspected.
    [86] Therefore, it is possible to improve the yield and productivity by reducing the defective rate of high-resolution products, thereby reducing the cost of the product.
    权利要求:
    Claims (10)
    [1" claim-type="Currently amended] Gate wirings and source wirings arranged so as to vertically intersect on the substrate; Gate pads connected to gate lines at one end of the gate lines and source pads connected to source pads at one end of the source lines; And first and second source short circuits alternately connected to the source pads.
    [2" claim-type="Currently amended] The liquid crystal display of claim 1, wherein the first and second source short circuits are alternately connected to the source pads.
    [3" claim-type="Currently amended] The liquid crystal display of claim 1, wherein the first and second source short circuits are alternately connected to the source pads three by three.
    [4" claim-type="Currently amended] The display device of claim 1, further comprising: a unit liquid crystal cell defined at each intersection of the gate lines and the source lines; And a pixel electrode connected to the drain electrode of the thin film transistor provided in the unit liquid crystal cell.
    [5" claim-type="Currently amended] 5. The liquid crystal display of claim 4, wherein the thin film transistor has a gate electrode connected to the gate lines, and a source electrode connected to the source lines.
    [6" claim-type="Currently amended] The liquid crystal display of claim 1, further comprising: a first gate short circuit connected to odd-numbered gate pads among the gate pads, and a second gate short circuit connected to even-numbered gate pads.
    [7" claim-type="Currently amended] The liquid crystal display of claim 1, further comprising: first and second gate short circuits alternately connected to the gate pads.
    [8" claim-type="Currently amended] Gate wirings and source wirings arranged so as to vertically intersect on the substrate; A unit liquid crystal cell defined at each intersection of the gate lines and the source lines; A thin film transistor provided in the unit liquid crystal cell and a pixel electrode connected to a drain electrode of the thin film transistor; Gate pads connected to gate lines at one end of the gate lines and source pads connected to source pads at one end of the source lines; First and second gate short circuits selectively connected to the gate pads; And first and second source short circuits alternately connected to the source pads.
    [9" claim-type="Currently amended] The liquid crystal display of claim 8, wherein the first gate short circuit is connected to odd-numbered gate pads and the second gate short circuit is connected to even-numbered gate pads.
    [10" claim-type="Currently amended] The liquid crystal display of claim 8, wherein the first and second gate short circuits are alternately connected to the gate pads.
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    同族专利:
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    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    法律状态:
    2001-12-28|Application filed by 엘지.필립스 엘시디 주식회사
    2001-12-28|Priority to KR20010087415A
    2003-07-04|Publication of KR20030057043A
    2008-06-27|Application granted
    2008-06-27|Publication of KR100841613B1
    优先权:
    申请号 | 申请日 | 专利标题
    KR20010087415A|KR100841613B1|2001-12-28|2001-12-28|Liquid crystal display having shorting bar for testing thin film transistor|
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